▎ 摘　　要

NOVELTY - Processing wafer level single crystal graphene heterojunction by direct growth method, comprises (1) pre-processing polycrystalline metal foil to obtain single crystal metal foil, (2) using crystal orientation inducing method to grow hexagonal boron nitride single crystal domain with consistent orientation on the surface of single crystal metal foil, (3) using the metal vapor evaporated from the surface of single crystal metal foil to catalyze the cracking of carbon precursors, and epitaxially growing graphene films on surface of hexagonal boron nitride to form hexagonal boron nitride/graphene vertical heterojunction, and (4) using catalytic cracking method to dissolve carbon atoms cracked from carbon source in single crystal metal foil, precipitating and epitaxially growing under the induction of hexagonal boron nitride crystal orientation, forming single crystal graphene film between the single crystal metal foil and hexagonal boron nitride film and obtaining the final product. USE - The method is useful for processing wafer level single crystal graphene heterojunction by direct growth method. ADVANTAGE - The method: is simple and can control the number of layers from single layer to multi-layer and determine the size of the graphene heterojunction by the size of the metal catalyst. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a single-crystal graphene/hexagonal boron nitride/graphene vertical heterojunction film prepared by the above-mentioned method. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for processing wafer level single crystal graphene heterojunction by direct growth method (Drawing includes non-English language text).