• 专利标题:   Graphite alkene standing pole shaped nanometer generator, has insulation layer formed on reduction oxidation graphene forming part, where thickness of electric conduction silicon chip is of specific valve.
  • 专利号:   CN105405960-A, CN105405960-B
  • 发明人:   CHEN S, CHEN G, HAN M, ZHAO C, ZHAO W, ZHOU Z
  • 专利权人:   NANJING COLLEGE INFORMATION TECHNOLOGY
  • 国际专利分类:   H01L041/113
  • 专利详细信息:   CN105405960-A 16 Mar 2016 H01L-041/113 201626 Pages: 13 English
  • 申请详细信息:   CN105405960-A CN10927131 14 Dec 2015
  • 优先权号:   CN10927131

▎ 摘  要

NOVELTY - The generator has an insulation layer formed on a reduction oxidation graphene forming part. An electric charge storing layer is formed in the reduction oxidation graphene forming part. An electric conduction silicon chip is arranged in a bottom electrode. The bottom electrode is arranged on an upper part of another insulation layer. The latter insulation layer is arranged on a charge storage layer, which is made of high molecular polymer. Thickness of the electric conduction silicon chip is 180-220 microns. USE - Graphite alkene standing pole shaped nanometer generator. ADVANTAGE - The generator is eco-friendly, and effectively controls nano piezoelectric generator working process, prevents a function layer from friction and improves energy conversion efficiency, and has prolonged service life. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphite alkene standing pole shaped nanometer generator manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphite alkene standing pole shaped nanometer generator.