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  • 专利标题:   Manufacture of graphene film used for manufacturing electronic device, involves forming graphene film having several layers on substrate, heating and etching at specified temperature.
  • 专利号:   JP2012041219-A, JP5571502-B2
  • 发明人:   HIBINO H, TANAKA S, HAGIWARA Y
  • 专利权人:   NIPPON TELEGRAPH TELEPHONE CORP, UNIV KYUSHU, NIPPON TELEGRAPH TELEPHONE CORP
  • 国际专利分类:   B82B001/00, C01B031/02
  • 专利详细信息:   JP2012041219-A 01 Mar 2012 C01B-031/02 201219 Pages: 13 Japanese
  • 申请详细信息:   JP2012041219-A JP182088 17 Aug 2010
  • 优先权号:   JP182088

▎ 摘　　要

NOVELTY - A graphene film having several layers, is formed on a substrate, heated, etched at specified temperature under hydrogen gas atmosphere to obtain graphene film. USE - Manufacture of graphene film used for manufacturing electronic device. ADVANTAGE - The method efficiently provides graphene film capable of reacting with hydrogen gas without coupling of carbon atom to hydrogen gas. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method to homogenize layers of graphene film, which involves heating and etching layer which covers the substrate partially among graphene film under hydrogen atmosphere. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view excellent manufacture of graphene film. (Drawing includes non-English language text) Silicon carbide substrate (100) Graphene film (104) Hydrogen adsorption layer (106)