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  • 专利标题:   Normal pressure chemical vapor deposition of high quality dual layer graphene thin film comprises pre-processing copper foil by using ethanol and acetone ultrasonic cleaning, introducing acetylene gas, and cooling.
  • 专利号:   CN103352202-A, CN103352202-B
  • 发明人:   LI W, QI M, REN Z, WANG H
  • 专利权人:   UNIV NORTHWEST
  • 国际专利分类:   C23C016/02, C23C016/26, C23C016/44
  • 专利详细信息:   CN103352202-A 16 Oct 2013 C23C-016/26 201405 Pages: 8 Chinese
  • 申请详细信息:   CN103352202-A CN10585747 29 Dec 2012
  • 优先权号:   CN10585747

▎ 摘　　要

NOVELTY - A normal pressure chemical vapor deposition of high quality dual layer graphene thin film comprises pre-processing a copper foil by using ethanol and acetone ultrasonic cleaning at 850-1050 degrees C with hydrogen and argon (1:2-2:1), introducing 0.5-3 standard cubic centimeter of acetylene gas for 7-30 minutes, cooling temperature to below 700 degrees C, stopping inletting hydrogen, cooling to room temperature. USE - Method for normal pressure chemical vapor depositing high quality dual layer graphene thin film. ADVANTAGE - The prepared graphene film has high quality.