▎ 摘　　要

NOVELTY - The preparation method of graphene/(040) crystal plane bismuth vanadate heterojunction structure involves dissolving bismuth(III) nitrate pentahydrate in dilute nitric acid, stirring until the solution is clear, adding ammonium metavanadate, and stirring to form precursor liquid (A), hydrothermally reacting the precursor liquid (A) to prepare (040) crystal plane bismuth vanadate precipitate, washing the precipitate, and drying to obtain (040) crystal plane bismuth vanadate powder, dissolving graphene oxide in aqueous ethanol solution, ultrasonically dispersing, and stirring. USE - Preparation method of graphene/(040) crystal plane bismuth vanadate heterojunction structure for photocatalytic degradation of organic contaminants (claimed). ADVANTAGE - The method enables preparation of graphene/(040) crystal plane bismuth vanadate heterojunction structure effectively reduces the recombination of electron-hole pair, improves the quantum efficiency, and enhances the photocatalytic activity and stability. DETAILED DESCRIPTION - The preparation method of graphene/(040) crystal plane bismuth vanadate heterojunction structure involves (1) dissolving bismuth(III) nitrate pentahydrate in dilute nitric acid, stirring until the solution is clear, adding ammonium metavanadate, and stirring for 50-90 minutes to form precursor liquid (A), where the molar ratio of bismuth(III) nitrate pentahydrate and ammonium metavanadate is 1:1, (2) hydrothermally reacting the precursor liquid (A) at 70-90 degrees C for 13-16 hours to prepare (040) crystal plane bismuth vanadate precipitate, washing the precipitate, and drying to obtain (040) crystal plane bismuth vanadate powder, (3) dissolving graphene oxide in aqueous ethanol solution, ultrasonically dispersing and uniformly stirring, adding dilute nitric acid, ultrasonically dispersing and uniformly stirring, adding sodium hydroxide solution, ultrasonically dispersing, and uniformly stirring to obtain graphene oxide solution, where the molar ratio of graphene oxide, dilute nitric acid and sodium hydroxide is (0.35-0.7):1:1, and (4) placing the prepared (040) crystal plane bismuth vanadate powder into the graphene oxide solution, stirring for 30-60 minutes to form precursor liquid (B), hydrothermally reacting the precursor liquid (B) at 150-180 degrees C for 0.5-1.5 hours, cooling to room temperature after the reaction is finished, washing the precipitate, and drying, where the mass ratio of (040) crystal plane bismuth vanadate powder and graphene oxide solution is (3-5):1. An INDEPENDENT CLAIM is included for graphene/(040) crystal plane bismuth vanadate heterojunction structure which is a monoclinic phase, exposes (040) crystal plane bismuth vanadate, makes the surface smooth, and coexists bismuth vanadate and reduced graphene oxide in the heterojunction of bismuth vanadate with graphene/(040) crystal plane to form a heterojunction structure.