• 专利标题:   Forming film comprising graphene on a substrate, used in graphene based electronic devices, comprises placing substrate into a reactor, placing a solid carbon source into reactor, and heating both the substrate and the solid carbon source.
  • 专利号:   US2014272136-A1
  • 发明人:   LI X
  • 专利权人:   BLUESTONE GLOBAL TECH LTD
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   US2014272136-A1 18 Sep 2014 C01B-031/04 201469 Pages: 11 English
  • 申请详细信息:   US2014272136-A1 US845085 18 Mar 2013
  • 优先权号:   US845085

▎ 摘  要

NOVELTY - Forming a film on a substrate (105), comprises: placing the substrate into a reactor (100); placing a solid carbon source (110) into the reactor; and heating both the substrate and the solid carbon source in the reactor, where the film comprises graphene. USE - The method is useful for forming a film on a substrate, where the film comprises graphene (all claimed), which is useful in graphene based electronic devices. ADVANTAGE - The method forms a film with a high quality and large area. DESCRIPTION OF DRAWING(S) - The figure shows a side sectional view of the chemical vapor deposition reactor. Chemical vapor deposition reactor (100) Substrate (105) Solid carbon source (110) Cylindrical reaction tube (115) First support end (120)