1. 平台首页
  2. 国际专利信息
  • 专利标题:   Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.
  • 专利号:   CN102392225-A, US2013022813-A1, WO2013013419-A1, CN102392225-B, US9328413-B2
  • 发明人:   CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X
  • 专利权人:   CHINESE ACAD SCI SHANGHAI MICROSYSTEM, SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   B82Y030/00, B82Y040/00, C23C016/02, C23C016/26, B05D003/00, B05D003/02, B32B009/00, C01B031/00, C23C016/50, C01B031/04
  • 专利详细信息:   CN102392225-A 28 Mar 2012 C23C-016/26 201315 Pages: 13 Chinese
  • 申请详细信息:   CN102392225-A CN10206608 22 Jul 2011
  • 优先权号:   CN10206608

▎ 摘　　要

NOVELTY - A single atom layer is prepared and formed on an insulating substrate, and graphene nano belt is directly grown on the substrate. USE - Manufacture of graphene nano belt for electric component.