• 专利标题:   Graphene based photoelectric detector, has first metal electrode arranged on side of silicon waveguide layer covered with graphene layer and located on graphene layer, and second metal electrode separated from graphene layer.
  • 专利号:   CN110379871-A
  • 发明人:   CUI J
  • 专利权人:   UNIV SANMING
  • 国际专利分类:   H01L031/0232, H01L031/028, H01L031/09
  • 专利详细信息:   CN110379871-A 25 Oct 2019 H01L-031/0232 201986 Pages: 6 Chinese
  • 申请详细信息:   CN110379871-A CN10614105 09 Jul 2019
  • 优先权号:   CN10614105

▎ 摘  要

NOVELTY - The detector has a micro-ring silicon waveguide arranged on a side of a rectangular silicon waveguide. A micro-ring resonant cavity structure is arranged in the rectangular silicon waveguide. A graphene layer is arranged on a silicon waveguide layer and covered on the rectangular silicon waveguide and the micro-ring silicon waveguide. A first metal electrode is arranged on a side of the silicon waveguide layer covered with the graphene layer and located on the graphene layer. A second metal electrode is arranged on another side of the silicon waveguide layer and separated from the graphene layer. USE - Graphene based photoelectric detector. ADVANTAGE - The detector has better responsiveness without extending absorption length and without affecting bandwidth. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a graphene based photoelectric detector.