▎ 摘　　要

NOVELTY - The method involves forming a trench (12) in a substrate (10). A device structure such as a FET is formed within the trench. A graphene layer (20) is formed over the FET. A protective layer is formed over the graphene layer. USE - Method for fabricating graphene-based device e.g. FET, p-n junction device (all claimed) and bipolar device for electronic application. Can also be used in large-scale circuit. ADVANTAGE - The fabrication process is simplified, thus enables larger variety of device dimensions and structures for graphene device. The reliability of the circuit is increased. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for graphene-based device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the graphene-based FET structure. Substrate (10) Trench (12) Metal contact (16) Graphene layer (20) Protective insulator cap (22)