• 专利标题:   Manufacture of self-supporting graphene film involves horizontally arranging substrate having through hole, dropping gallium droplet, placing substrate in chamber, introducing mixed gas of carrier gas and raw material gas, and heating.
  • 专利号:   JP2021038434-A
  • 发明人:   KAWAI K
  • 专利权人:   UNIV OSAKA
  • 国际专利分类:   C01B032/186, C23C016/01, C23C016/26
  • 专利详细信息:   JP2021038434-A 11 Mar 2021 C23C-016/26 202125 Pages: 16 Japanese
  • 申请详细信息:   JP2021038434-A JP160340 03 Sep 2019
  • 优先权号:   JP160340

▎ 摘  要

NOVELTY - Manufacture of self-supporting graphene film (FSG) involves horizontally arranging a substrate (S) provided with a through hole (H), dropping gallium droplet (LG) on the substrate such that through holes are closed, placing the substrate in a chamber, introducing a mixed gas of a carrier gas and a raw material gas, heating with a predetermined temperature profile to form graphene film (G), removing the droplets and forming graphene film as self-supporting graphene film. USE - Manufacture of self-supporting graphene film. ADVANTAGE - The self-supporting graphene film can be produced efficiently. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view explaining manufacture of graphene. Base material (B) Core material (C) Self-supporting graphene film (FSG) Graphene film (G) Through-hole (H) Gallium droplets (LG) Substrate (S)