▎ 摘　　要

NOVELTY - Preparing silicon nitride ceramic copper-clad plate involves weighing raw material alpha-silicon nitride (Si3N4), beta-Si3N4, silicon carbide (SiC) and sintering auxiliary agent according to mass ratio of 75-85:5-15:5, using Si3N4graphene ball milling modification, preparing mixed powder, preparing SiC-Si3N4ceramic, preparing oxidation graphene, taking graphene as adhesive between copper base body and ceramic base body, preparing oxidized graphene-based heat conducting adhesive for bonding between copper base body and ceramic substrate, compacting and attaching graphene copper matrixes to two sides of SiC-Si3N4 composite ceramic. USE - Method for preparing silicon nitride ceramic copper-clad plate used for semiconductor component. ADVANTAGE - The method enables to have improved heat conducting performance and mechanical property. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a silicon nitride ceramic copper-clad plate, which is prepared by preparation method, comprising two copper base bodies arranged in parallel, and SiC-Si3N4composite ceramic plate base body adhered between two copper base bodies by heat-conducting adhesive.