▎ 摘　　要

NOVELTY - The method involves alternatively stacking dielectric layer and metal layer (3) to form layered structure on substrate (1). The anisotropic etching process is performed to obtain laminated stack structure. The side surfaces of dielectric layer and metallic layer are exposed. A graphene layer is grown on exposed side of metal layer. The dielectric layer is filled in gap between laminated stack structure. The dielectric layer and metal layer are removed, so that graphene layer is transferred onto side of another dielectric layer. The layer of metal material is nickel, copper and ruthenium. USE - Semiconductor device manufacturing method. ADVANTAGE - The edge roughness of graphite nano-belt is low, so that three-dimensional graphene devices is manufactured with high degree of integration. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the semiconductor device manufacturing process. (Drawing includes non-English language text) Substrate (1) Medium layers (2,5) Metal layer (3)