▎ 摘　　要

NOVELTY - A method for preparing a graphene film on an insulating substrate is provided, including the following steps. In the atmospheric environment, the insulating substrate is wrapped with and closely attached to a copper foil, and placed in a chemical vapor deposition furnace tube. After that, argon gas is introduced into the chemical vapor deposition furnace tube at a first flow rate and a temperature of the chemical vapor deposition furnace tube is raised. When the temperature is raised to a target temperature, the argon gas is converted to a second flow rate of hydrogen, and thermal annealing is performed. Next, a graphene growth step is performed on the insulating substrate, and a mixed gas of argon and hydrogen is introduced, and camphor is heated. After the graphene growth step is completed, the temperature is lowered.