▎ 摘　　要

NOVELTY - The utility model belongs to the field of semiconductor, claims a semiconductor structure for growing gallium nitride by graphene mask method, comprising a gallium nitride layer, a graphene mask layer; a substrate layer; the substrate layer is directly grown graphene mask layer by plasma enhanced chemical vapour deposition; the graphene mask layer forms a grating-shaped stripe by etching; the graphene mask layer grows the gallium nitride layer by metal organic chemical vapour deposition. Beneficial effects: graphene mask layer structure can effectively reduce the gallium nitride dislocation, improve the growth quality; Because the graphene is a two-dimensional material, which can reduce the low angle grain boundary defect caused by the mask layer; at the same time, the graphene has good radiating performance, so as to greatly improve the radiating performance of the gallium nitride device; The graphene mask layer and the gallium nitride layer are combined by weak Van der Waals force so that the gallium nitride layer is easy to peel off. The structure also can be applied to III-V group compound semiconductor except gallium nitride.