• 专利标题:   Manufacture of graphene oxide for forming graphene film, involves laser ablation of medium containing sulfuric acid and sulfonated graphite, adding nitric acid and oxidant to form suspension, and hydrolyzing sulfonated graphite.
  • 专利号:   JP5357323-B1, JP2014125406-A
  • 发明人:   ISAWA K, KOYANAGI M, MAKINO T, SHIBUYA A, IZAWA K
  • 专利权人:   MICC TEC CO LTD, MICC TEC KK
  • 国际专利分类:   C01B031/02
  • 专利详细信息:   JP5357323-B1 04 Dec 2013 C01B-031/02 201382 Pages: 10 Japanese
  • 申请详细信息:   JP5357323-B1 JP285053 27 Dec 2012
  • 优先权号:   JP285053

▎ 摘  要

NOVELTY - A suspension is prepared by performing laser ablation in reaction medium containing 90-98 %mass sulfuric acid with respect to graphite and sulfonated graphite, and adding 60-98 %mass nitric acid and oxidant, by stirring in the presence of solid acid catalyst for sulfonation. 25-40 %mass hydrochloric acid and water is added to obtained suspension and sulfonated graphite is hydrolyzed to obtain graphene oxide. USE - Manufacture of graphene oxide used as intermediate for manufacturing graphene used for forming graphene film for transistor and very large scale integrated circuits. ADVANTAGE - The method is efficient and economical without using apparatus e.g. chemical vapor deposition apparatus.