▎ 摘　　要

NOVELTY - Graphene transistor (100) comprises a graphene monolayer (102) comprising: a first surface (112) having a first contact region (116) and a second contact region (118); and a second surface (114) formed opposite the first surface (112) and having a first layer at the first contact region (116) and a second layer at the second contact region (118); a source metal (104) fabricated on the first contact region (116); a drain metal (106) fabricated on the second contact region (118) such that the drain metal (106) and the source metal (104) form a channel (120) of the first surface (112); and a second graphene layer (108) positioned at the first contact region (116) and the second contact region (118) and in contact with the source metal (104) and the drain metal (106). USE - Graphene transistor for amplifying or switching electronic signals and electrical power in integrated circuits used in various technologies, such as radio-frequency (RF) technologies. ADVANTAGE - The surface defects in the first layer and the second layer reduce the limit on the current flow between the interface of metal and graphene, thus reducing the contact resistance. The reduction in contact resistance is independent of the source metal and drain metal, thus enabling the use of different types of material to fabricate the graphene transistors. The graphene transistor drastically reduces the metal-graphene contact resistance and boosts transistor performance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of fabricating a graphene transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene transistor with a first layer at a first contact region and a second layer at a second contact region. 100Graphene transistor 102Graphene monolayer 104Source metal 106Drain metal 108Second graphene layer 112First surface 114Second surface 116First contact region 118Second contact region 120Channel