▎ 摘　　要

NOVELTY - The method (200) involves providing (202) a substrate that includes an insulating layer. A carbon-containing layer is formed (204) over insulating layer and includes a self-assembled monolayer with tridecafluoro-tetrahydrooctyl-trichlorosilane and dodecyltrichlorosilane. A metal layer is formed (206) over carbon-containing layer. An annealing process is performed (208) which serves to convert carbon-containing layer into a graphene layer. The metal layer includes Nickel, copper, platinum, iron, carbon monoxide, gold and copper-nickel alloy. USE - Method for fabricating semiconductor device such as graphene device. ADVANTAGE - The method used to provide large-area graphene using a transfer-free, direct growth process thus fabricates graphene devices with improved characteristics. The carbon nanotube has a controlled band gap is fabricated so as to ensure formation of an appropriate semiconducting carbon nanotube for subsequent transistor fabrication. The self-assembled monolayer (SAM) is deposited using a vapor phase deposition process that provides a highly conformal SAM with excellent step coverage on high-aspect ratio structures and facilitates SAM deposition onto surface topographies. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating for a method of fabricating a graphene device. Method for fabricating semiconductor device (200) Step for providing a substrate that includes an insulating layer (202) Step for forming carbon-containing layer over insulating layer (204) Step for forming metal layer over carbon-containing layer (206) Step for performing annealing process (208)