▎ 摘　　要

NOVELTY - The structure has a nanoribbon-containing layer (24) settled on upper surface of a substrate (12) i.e. wafer, where the layer includes alternating graphene nanoribbons separated by alternating insulating ribbons. Dielectric material is coated on top layer of a multilayer stack, where the nanoribbons have width ranging from 1 to 20 nanometer, and a hexagonal crystallographic bonding structure. A graphene layer is formed on upper surface of a substrate, where alternating portions are exposed to hydrogen-containing ambient or fluorine-containing ambient. USE - Structure for use in a semiconductor device i.e. FET, of an integrated circuit (claimed) of a portable electronic device e.g. cellular phone and personal computing device. ADVANTAGE - The structure allows exposed portions of the graphene layer to be subjected to atomic hydrogen or atomic fluorine produced by dissociation of molecular hydrogen or molecular fluorine in plasma, so that dissociation of remote plasma is realized, thus protecting the modified graphene layer from plasma damage, and hence preventing deterioration in electrical quality of graphene layer. The structure allows amorphous hard mask materials to be employed rather than crystalline hard mask materials, and the amorphous hard mask material can produce smoother edges when patterned, thus reducing the potential of transferring line edge roughness during subsequent processing of the graphene layer. DETAILED DESCRIPTION - The alternating graphene nanoribbons are selected from a group consisting of single layer graphene, few-layer graphene, multi-layer graphene, mixture of single-layer, few-layer and multi-layer graphene. The hydrogen-containing ambient is formed from molecular or atomic hydrogen, and the fluorine-containing ambient is formed from molecular or atomic fluorine. The substrate is one of single crystalline substrate or polycrystalline substrate or amorphous substrate. An INDEPENDENT CLAIM is also included for a method for fabricating a semiconductor structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a semiconductor device with a semiconductor structure. Substrate (12) Nanoribbon-containing layer (24) Gate dielectric layer (52) Gate conductor (54) Source region (56) Semiconductor device (70)