• 专利标题:   Single crystal high-temperature resistant alloy and coating interface diffusion resistant layer comprises a graphene film and a carburized layer.
  • 专利号:   CN110468384-A
  • 发明人:   ZHANG R, HE L, MU R, XU Z, LI N
  • 专利权人:   AECC BEIJING AERONAUTICAL MATERIALS INS
  • 国际专利分类:   C23C014/16, C23C014/32, C23C016/26, C23C028/00, C23C008/20
  • 专利详细信息:   CN110468384-A 19 Nov 2019 C23C-016/26 201993 Pages: 7 Chinese
  • 申请详细信息:   CN110468384-A CN10664930 22 Jul 2019
  • 优先权号:   CN10664930

▎ 摘  要

NOVELTY - Single crystal high-temperature resistant alloy and coating interface diffusion resistant layer comprises a graphene film and carburized layer. USE - Used as single crystal high-temperature resistant alloy substrate and coating interface diffusion resistant layer. ADVANTAGE - The diffusion resistant layer utilizes graphene to prevent element diffusion ability, improves stability of the alloy organization, inhibits mutual diffusion of elements, reduces or eliminates harmful phase and TCP which forms the secondary reaction area, and prolongs service life of the single crystal high-temperature resistant alloy/coating system. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing single crystal superalloy and coating interface diffusion resistant layer, comprising (i) controlling surface roughness of single crystal high-temperature resistant alloy substrate, and ultrasonically cleaning, and (ii) (iia) placing the treated single crystal high-temperature resistant alloy substrate in the constant temperature zone of the tube furnace, (iib) passing inert gas at a flow rate of 200-500 sccm for 10-20 minutes, and discharging air in the cavity, (iic) passing hydrogen at a flow rate of 10-50 sccm, heating the tube furnace to 950-1050 degrees C, and maintaining the temperature for 0.5-2 hours, (iid) finishing preserving, introducing carbon source, cracking carbon source at high temperature and carburizing single crystal high-temperature resistant alloy substrate, and (iie) stopping to pass carbon source and hydrogen gases, closing the heating furnace, rapid cooling the single crystal high-temperature resistant alloy substrate to room temperature, opening the furnace and taking out the sample to obtain single crystal high-temperature resistant alloy substrate graphene film having graphene film on the surface and a carburized layer on the inner surface layer.