• 专利标题:   Method for manufacturing thermoelectric device, involves contacting the lower electrode to the upper thermal pattern, and forming the lower graphene pattern on a lower substrate.
  • 专利号:   KR2015077015-A, KR1545974-B1
  • 发明人:   GUIM H U, KIM K S, PARK S J, NAM J T
  • 专利权人:   KOREA BASIC SCI INST
  • 国际专利分类:   H01L035/02, H01L035/14
  • 专利详细信息:   KR2015077015-A 07 Jul 2015 H01L-035/02 201552 Pages: 11
  • 申请详细信息:   KR2015077015-A KR165812 27 Dec 2013
  • 优先权号:   KR165812

▎ 摘  要

NOVELTY - The method involves contacting the lower electrode to the upper thermal pattern, and forming the lower graphene pattern (120) on a lower substrate. The lower thermal pattern is formed on the lower graphene pattern. The lower and upper graphene patterns are faced to each other. USE - Method for manufacturing thermoelectric device. ADVANTAGE - The method involves contacting the lower electrode to the upper thermal pattern, and forming the lower graphene pattern on a lower substrate, and thus improves thermoelectric efficiency of the thermoelectric device in a cost-effective manner. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a thermoelectric device. Lower plate (100) Bottom electrode (110) Lower graphene pattern (120) Upper plate (200) Upper electrode (210)