• 专利标题:   Manufacturing nitrogen dioxide gas sensor comprises synthesizing graphene material film for forming silicon carbide base plate covered with a homogeneous graphene film suitable for manufacturing nitrogen dioxide gas sensors.
  • 专利号:   VN90425-A
  • 发明人:   TROONG H L, NGUYEN T P, TRAN D H
  • 专利权人:   HO CHI MINH DEPT SCI TECHNOLOGY
  • 国际专利分类:   G01N027/12
  • 专利详细信息:   VN90425-A 25 Oct 2022 G01N-027/12 202310 Pages: 1
  • 申请详细信息:   VN90425-A VN004969 05 Aug 2022
  • 优先权号:   VN004969

▎ 摘  要

NOVELTY - Manufacturing nitrogen dioxide gas sensor comprises synthesizing graphene material film directly on the surface of a silicon carbide substrate by thermodynamic technique in a high vacuum or a low vacuum media comprising Argon gas, for forming silicon carbide base plate covered with a homogeneous graphene film suitable for manufacturing nitrogen dioxide gas sensors, where the silicon carbide baseplate is coated with homogenous graphene material and then etched with a nitrogen dioxide sensitive sensor structure and surrounding resistive structure to heat the sensor during operation. USE - The method is useful for: manufacturing nitrogen dioxide gas sensor. ADVANTAGE - The method enables direct generation of monolayer graphene on the surface of a silicon carbide substrate suitable for large-scale production and enables the creation of a dual-sensor structure on a single silicon carbide substrate to reduce the size and reduce the product price.