▎ 摘　　要

NOVELTY - Method for depositing a thin film containing carbon involves exposing the substrate to a precursor in a chamber loaded with a substrate, purging the precursor in a chamber exposed to the precursor, exposing the substrate to a reactive plasma in a chamber in which the precursor is purged, and purging the reactive plasma from the chamber exposed to reactive plasma, where the deposition cycle is repeatedly performed a predetermined number of times, and forming a carbon-containing thin film by carrying out a carbon-containing plasma treatment in the repeating process, in which the carbon content is adjusted to a predetermined ratio. USE - The method is useful for depositing a thin film containing carbon. ADVANTAGE - The method easily adjusts carbon content, and easily controls physical and chemical properties of thin film.