▎ 摘　　要

NOVELTY - The method involves forming a vertical hole e.g. blind hole, and manufacturing a substrate and an insulating layer on an inner surface. The inner surface of the vertical hole is covered by the insulating layer, and a graphene-containing layer is formed on the insulation layer. The substrate is made of semiconductor material, metal material and insulating material. The insulating layer is made of inorganic or organic substance and a mixture of inorganic substance and organic substance. USE - Method for manufacturing a graphene vertical interconnection structure. ADVANTAGE - The method enables providing a trajectory transporting mechanism with high electric conductivity, improved electric signal transmission performance and high speed electric signal characteristic, and reducing vertical interconnection structure and interference of the circuits. DESCRIPTION OF DRAWING(S) - The drawing shows a side sectional view of a graphene vertical interconnection structure.