▎ 摘　　要

NOVELTY - A preparation method of piezoelectric nanogenerator, involves taking dinitrogen pentoxide as a nitrogen source, doping silicon carbide single wafer to obtain nitrogen-doped silicon carbide, electrochemical etching surface of N-doped silicon carbide to form a silicon carbide nano-structure array film, keeping the silicon carbide forming silicon carbide nano-structure array film to form a silicon dioxide oxidation layer on a surface of silicon carbide, coating polymer dispersed with conductive filler on silicon carbide nano-structure array film of silicon carbide with silicon dioxide oxidation layer formed on surface, and drying to form a conductive filler polymer coating layer, cleaning, exposing to nano-structure array, spin-coating a layer of polymer without conductive filler on film, and drying to form a polymer layer without conductive filler, magnetron sputtering a layer of metal on silicon carbide, leading out, and packaging whole device on substrate to obtain a final product. USE - Preparation method of piezoelectric nanogenerator with all-weather service capability constructed based on nitrogen-doped silicon carbide nano-structure array. ADVANTAGE - The piezoelectric nanogenerator is prepared with all-weather service capability constructed based on nitrogen-doped silicon carbide nanostructure array. When the obtained piezoelectric nanogenerator is subjected to an external force along the thickness direction, a significant electrical signal output on the macroscopic scale is obtained. The piezoelectric nano-generator outputs stably for 300-500 days under the conditions of a temperature of 80degreesC and a relative humidity of 0-100%. DETAILED DESCRIPTION - A preparation method of piezoelectric nanogenerator, involves taking dinitrogen pentoxide as a nitrogen source, doping silicon carbide single wafer at 1000-1500degreesC and 100-500 Pa for 1-20 hours under the protection of argon gas atmosphere to obtain nitrogen-doped silicon carbide with concentration of 0.1-10 mol%, electrochemical etching a carbon surface or silicon surface of the N-doped silicon carbide to form a silicon carbide nano-structure array film with thickness of 50-300 mum, and shape of nanopores, nanostrips, nanorods or nanowires, keeping the silicon carbide forming silicon carbide nano-structure array film at a temperature of 1300-1800degrees Celsius for 1-24 hours in air or oxygen atmosphere to form a silicon dioxide oxidation layer on a surface of silicon carbide, coating the polymer dispersed with conductive filler on the silicon carbide nano-structure array film of silicon carbide with silicon dioxide oxidation layer formed on the surface, and drying to form a conductive filler polymer coating layer with thickness of 100-500 mum, using plasma to clean the polymer on the silicon carbide nano-structure array film, exposing to the nano-structure array for 10-50 microns, spin-coating a layer of polymer without conductive filler on the silicon carbide nano-structure array film, and drying to form a polymer layer without conductive filler with thickness of 20-80 mum, magnetron sputtering a layer of metal with thickness of 10-100 nm on two sides of silicon carbide as the upper and lower electrodes, leading out the lead, and packaging the whole device on the substrate to obtain a final product. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the preparation method of piezoelectric nanogenerator. (Drawing includes non-English language text)