▎ 摘　　要

NOVELTY - The preparation of two-dimensional tin graphene material involves carrying out epitaxial growth of monolayers or multi-atomic layer of ( alpha )-tin crystal thin film on single crystal substrate, connecting single crystal substrate with tin atom of ( alpha )-tin crystal film through sp3 chemical bond, carrying out electron bombardment using atoms and/or ions, forming passivation layer or amorphous layer at interface between single crystal substrate and ( alpha )-tin crystal thin film to break sp3 chemical bond, and reconstructing tin atom of ( alpha )-tin crystal thin films into sp2 chemical bond. USE - Preparation of two-dimensional tin graphene material (claimed). ADVANTAGE - The method enables preparation of two-dimensional tin graphene material by simple and easy process.