▎ 摘　　要

NOVELTY - The device has a sapphire substrate layer (1), a magnetron sputtering aluminum nitride layer (2), a gallium nitride layer (3), an aluminum gallium nitride layer (4), a cathode metal (5), an anode metal (6) and a two-dimensional fluorinated material passivated layer. The two-dimensional fluorinated material passivated layer is covered on the surface of the aluminum gallium nitride layer/ gallium nitride. The two-dimensional fluorinated material passivated layer is located above the aluminum gallium nitride layer, the cathode metal is located on both sides above the aluminum gallium nitride layer, and the anode metal is located above the aluminum gallium nitride layer. USE - Low-leakage gallium nitride Schottky barrier diode (SBD) device. ADVANTAGE - The aluminum gallium nitride layer/ gallium nitride surface is covered with a layer of two-dimensional fluorinated material so that the electrons of the two-dimensional fluorinated material is captured in the donor state on the aluminum gallium nitride layer/ gallium nitride surface, and a dipole layer is formed on the aluminum gallium nitride layer/ gallium nitride surface to make the surface donor state become electric neutrality, so as to reduce the charge amount of the surface donor state and the surface leakage of gallium nitride SBD. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing device based on graphene insertion layer structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the profile structure of low-leakage gallium nitride Schottky barrier diode device. Sapphire substrate layer (1) Magnetron sputtering aluminum nitride layer (2) Gallium nitride layer (3) Aluminum gallium nitride layer (4) Cathode metal (5) Anode metal (6)