▎ 摘　　要

NOVELTY - A composite substrate is obtained by carrying out epitaxial growth of silicon nitride on surface of base substrate, cleaned and dried. A nickel metal film is grown on composite substrate, and composite substrate is added into a furnace, to form N-enriched silicon nitride structure. The nickel-silicon alloy surface layer is removed using etching agent. The substrate is added into chemical vapor deposition device, heated, argon gas, hydrogen and gaseous carbon source are introduced, and nickel metal film-coated N-type doped silicon nitride growth controllable graphene material. USE - Manufacture of nickel metal film-coated N-type doped silicon nitride growth controllable graphene material (claimed). DETAILED DESCRIPTION - A composite substrate is obtained by carrying out epitaxial growth of silicon nitride on the surface of base substrate. The composite substrate is cleaned and dried. A nickel metal film is grown on the surface of composite substrate, and obtained nickel/silicon nitride/base superalloy composite substrate is added into a furnace, nickel atoms and silicon atoms form nickel-silicon alloy at high temperature, nitrogen atoms remaining on the surface of silicon nitride exists as unsaturated bond, and N-N bond is reconstructed to form N-enriched silicon nitride structure. The thickness of metal film and alloy temperature determines nitrogen atom number on the surface of silicon nitride surface. The nickel-silicon alloy surface layer is removed using etching agent. The composite substrate is added into chemical vapor deposition device, heated, argon gas, hydrogen and gaseous carbon source are introduced, and nickel metal film-coated N-type doped silicon nitride growth controllable graphene material.