▎ 摘　　要

NOVELTY - The method involves mixing graphite, Sodium nitrate and Sulfuric acid in an ice bath. Mixed solution is obtained from Hydrogen peroxide solution. Filtered material is washed with warm water to obtain a aqueous solution. The silicon wafer is cleaned. Two silicon wafers are placed in the aqueous solution. A working electrode is connected to a positive electrode of a direct current (DC) power supply. A counter electrode is connected to a negative electrode of the DC power supply. An electrode is electrified to deposit graphene oxide film on a surface of the silicon wafer. The graphene oxide film is annealed at a high temperature to obtain a graphene film. USE - Method for for preparing a high pure graphene film of an electrode in a capacitor (claimed). ADVANTAGE - The method enables simplifying process, reducing raw material cost, energy consumption rate. DESCRIPTION OF DRAWING(S) - The drawing shows a graphical representation of a Method for for preparing a high pure graphene film of an electrode in a capacitor. (Drawing includes non-English language text).