• 专利标题:   Low liquid tension wet transfer of graphene comprises cleaning and drying the copper foil with graphene growth, configuring the corrosion solution, adding the etching solution into the container and adding heptane into graphene-copper foil.
  • 专利号:   CN108455577-A
  • 发明人:   ZHAO P, WANG H, XU C, WANG Y, YIN S
  • 专利权人:   UNIV ZHEJIANG
  • 国际专利分类:   C01B032/184
  • 专利详细信息:   CN108455577-A 28 Aug 2018 C01B-032/184 201864 Pages: 6 Chinese
  • 申请详细信息:   CN108455577-A CN10212644 15 Mar 2018
  • 优先权号:   CN10212644

▎ 摘  要

NOVELTY - Low liquid tension wet transfer of graphene comprises: (i) cleaning and drying the copper foil with graphene growth; (ii) configuring the corrosion solution, adding the etching solution into the container, raising the liquid level of the etching solution to form a convex liquid surface; (iii) adding heptane into the graphene-copper foil, forming a layer of heptane on the surface of the graphene; (iv) floating the graphene-copper foil with heptane layer on the convex surface of the etching solution, adding heptane into the etching solution; (v) allowing it to stand for copper foil to dissolve, laying the oxide layer of the substrate over the graphene; (vi) slowly pressing the substrate against the graphene until the graphene is in full contact with the substrate, attaching the graphene to the substrate to form a graphene-substrate; and (vii) cleaning the graphene-substrate, removing the corrosion solution, residual metal and heptane, then drying to obtain a clean graphene-substrate. USE - The method is useful for low liquid tension wet transfer of graphene. ADVANTAGE - The method completely transfer graphene and does not include impurities. DETAILED DESCRIPTION - Low liquid tension wet transfer of graphene comprises: (i) cleaning and drying the copper foil with graphene growth; (ii) configuring the corrosion solution, adding the etching solution into the container, raising the liquid level of the etching solution to form a convex liquid surface; (iii) adding heptane into the graphene-copper foil, where heptane completely covers the surface of the graphene, forming a layer of heptane on the surface of the graphene; (iv) floating the graphene-copper foil with heptane layer on the convex surface of the etching solution, where the copper foil and the etching solution are on the liquid surface, graphene is located on the copper foil, adding heptane into the etching solution; (v) allowing it to stand for copper foil to dissolve, laying the oxide layer of the substrate horizontally over the graphene, contacting the substrate with the graphene surface; (vi) slowly pressing the substrate against the graphene until the graphene is in full contact with the substrate, attaching the graphene to the substrate to form a graphene-substrate; and (vii) cleaning the graphene-substrate, removing the corrosion solution, residual metal and heptane, then drying to obtain a clean graphene-substrate.