▎ 摘　　要

NOVELTY - A group III nitride epitaxy crystal structure comprises a substrate, group III nitride epitaxy layer (I), graphene, a patterning mask layer, and group III nitride epitaxy layer (II), provided sequentially. USE - Nitride epitaxy crystal structure (claimed). ADVANTAGE - The nitride epitaxy crystal structure has low stress and low defect density, and can be industrially prepared by a controlled method. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of nitride epitaxy crystal structure.