▎ 摘　　要

NOVELTY - Preparing composite semiconductor material comprises (i) uniformly mixing graphene and sodium hydroxide, heating, filtering, washing filtrate and sintering; (ii) uniformly mixing anhydrous ethanol, L-selenomethionine and sodium sulfate, regulating pH, heating, stirring evenly, cooling, freezing; (iii) preparing sensitive matrix; (iv) uniformly mixing sensitive matrix with zinc chloride and diethylenetriamine, preheating; and (v) uniformly mixing the step (iv) product with tetrabutyl titanate, filtering, washing, annealing and pulverizing. USE - The composite semiconductor material is useful for adsorbing pollutant. ADVANTAGE - The composite semiconductor material has high stability. DETAILED DESCRIPTION - Preparing composite semiconductor material comprises (i) uniformly mixing 600-900 g graphene and 900-1000 ml 50% sodium hydroxide in a beaker, heating to boiling for 3-5 hours, filtering, washing (3-5 times) the filtrate with anhydrous ethanol and sintering at 1100-1300 degrees C for 20-30 minutes; (ii) uniformly mixing 500-700 ml anhydrous ethanol, 80-110 g L-selenomethionine and 52-62 g sodium sulfate, regulating pH to 9-9.5 using 30 wt.% sodium hydroxide, heating the flask to 110-115 degrees C, stirring evenly at 200 rotations/minute for 1-2 hours, cooling to room temperature, freezing in a refrigerator at 5 degrees C for 20-30 minutes; (iii) lowering the temperature of the step (i) product to 300-400 degrees C, maintaining solid-liquid ratio of 1:3, uniformly mixing step (i) and (ii) products at 300 rotations/minute, filtering, washing (2-3 times) the filtrate with distilled water, placing in an oven, drying at 90 degrees C for 10-12 hours, subjecting to planetary ball mill for grinding to 200 meshes sieve powder, to obtain sensitive matrix; (iv) uniformly mixing 70-100 g sensitive matrix with 220-230 ml 20% zinc chloride and 40-60 ml diethylenetriamine in a reaction kettle under nitrogenated conditions, preheating at 50-120 rotations/minute for 10-15 minutes; and (v) uniformly mixing the step (iv) product with 180-250 g tetrabutyl titanate, rising temperature to 160-180 degrees C, stirring evenly at 200 rotations/minute for 2-3 hours, cooling naturally to room temperature, filtering, washing (3-5 times) with distilled water, drying the filtrate in an vaccum oven at 60 degrees C, placing the dried material in a muffle furnace, annealing at 550-600 degrees C for 5 hours, pulverizing to 200 meshes final product.