• 专利标题:   Planar silicon-based organic/inorganic hybrid solar battery structure, has three-dimensional net-like film structure provided with graphene quantum dot quantum dots, where total thickness of N-type organic layer and P-type planar crystalline silicon is in specific range.
  • 专利号:   CN209472000-U
  • 发明人:   XIAO H, CAO J, ZHOU J, ZHONG W, WANG Y, WANG G, JIANG W
  • 专利权人:   UNIV NANCHANG HANGKONG
  • 国际专利分类:   H01L051/42, H01L051/44, H01L051/46, H01L051/48
  • 专利详细信息:   CN209472000-U 08 Oct 2019 H01L-051/42 201979 Pages: 7 Chinese
  • 申请详细信息:   CN209472000-U CN20672970 13 May 2019
  • 优先权号:   CN20672970

▎ 摘  要

NOVELTY - The utility model claims a plane silicon-based organic/inorganic hybrid solar cell structure from the back to the front in turn anti-reflecting film and a front metal grid line electrode composed of metal back electrode, a P-type planar transistor silicon, graded refractive index stack of graded refractive index laminated antireflection film in each layer is anti-reflection film are uniformly dispersed in the cross-linked as graphene quantum dot electron-transporting conjugated polymer in SN. The utility model can be solution-processed laminated antireflection film technology is combined with the planar silicon-based organic/inorganic hybrid solar cell technology, uses graded refractive index laminated antireflection film forms a heterojunction between a N-type organic layer and P-type planar silicon substrate. can provide good electrical structure for the battery, which is good for extraction and transport of the device carrier, but also can be used as battery antireflective layer to achieve the graded refractive index, optimizing the device to absorb the incident light and used, so as to form excellent photovoltaic volt effect, cell has simple structure, high generating efficiency and is easy to apply.