• 专利标题:   Tin dioxide/boron-doped graphene nano-composite material for electronic devices, comprises tin oxide and boron-doped graphene, and is prepared by mixing graphene with mixed solution to obtain oxidized graphite alkene.
  • 专利号:   CN103346020-A, CN103346020-B
  • 发明人:   HAO Q, LEI W, LIU P, WANG W, XIA X, WANG X
  • 专利权人:   UNIV NANJING SCI TECHNOLOGY
  • 国际专利分类:   H01G011/32, H01G011/46
  • 专利详细信息:   CN103346020-A 09 Oct 2013 H01G-011/32 201404 Pages: 9 Chinese
  • 申请详细信息:   CN103346020-A CN10313571 25 Jul 2013
  • 优先权号:   CN10313571

▎ 摘  要

NOVELTY - A tin dioxide/boron-doped graphene nano-composite material comprises 20.1-71.5 mass% tin oxide and 1.1-5.3 mass% boron-doped graphene. USE - Tin dioxide/boron-doped graphene nano-composite material for electronic devices. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing a tin dioxide/boron-doped graphene nano-composite material, which involves mixing graphene with mixed solution of water and ethanol, carrying out an ultrasound dispersion process to obtain oxidized graphite alkene, adding, stirring and dissolving boric acid and stannous chloride with the obtained oxidized graphite alkene, placing the obtained mixture in a hydrothermal kettle, and carrying out filtering, separating, washing and drying processes to obtain a tin dioxide/boron-doped graphene nano-composite material.