▎ 摘　　要

NOVELTY - Improving performance of ion-doped nickel-cobalt-manganese ternary material using highly dispersed graphene comprises e.g. mixing graphene powder and active agent, stirring, filtering, then adding wet milling medium, carrying out ultrasonic oscillation to obtain intercalated graphene solution; then mixing intercalation graphene solution and doped ion ternary material to obtain precursor 1, drying precursor 1 and stirring to obtain dried precursor 2, then adding precursor 2 in air atmosphere, sintering to obtain precursor 3; placing precursor 3 in air or pure oxygen atmosphere. USE - The method is useful for improving the performance of ion-doped nickel-cobalt-manganese ternary material using highly dispersed graphene. ADVANTAGE - The method: has simple preparation process, utilizes cheaply available raw material and less time consumption and is suitable for industrial production; and the product: has excellent discharge performance. DETAILED DESCRIPTION - Improving performance of ion-doped nickel-cobalt-manganese ternary material using highly dispersed graphene comprises mixing graphene powder and active agent at a mass ratio of 1:5-100, then stirring for 10-100 minutes at a temperature of 50-95 degrees C and washing with deionized water to removing excess active agent until washing liquid becomes neutral, filtering the obtained filter residue is the intercalation layer graphene, then immediately adding 5-1000 times volume of wet milling medium in the volume of the intercalated graphene, carrying out ultrasonic oscillation for 5-100 minutes, so that uniformly dispersing the intercalated graphene in a wet grinding medium to obtain intercalated graphene solution; then mixing intercalation graphene solution and doped ion ternary material in a volume ratio of 5-1000:1 to obtain precursor 1, drying precursor 1 at a temperature of 120-260 degrees C under a vacuum and stirring conditions lower than 1 atmosphere to obtain dried precursor 2, then adding precursor 2 in air atmosphere, sintering at a sintering temperature of 850-980 degrees C for 0.01-50 minutes to obtain precursor 3; placing the precursor 3 in air or pure oxygen atmosphere, sintering at 200-380 degrees C at a speed of 10-50 degrees C/minute from the temperature between interval for 1-600 minutes to obtain highly dispersed graphene improved doped ternary material.