▎ 摘　　要

NOVELTY - Multi-layered graphene is formed on a substrate and bands with height of 1-300 nm with space of less than 10 nm between them are formed on surface of substrate. The substrate is subjected to argon/hydrogen annealing at 600-1100 degrees C for 30 minutes to 3 hours, naturally cooled to room temperature, temperature is increased, and further cooled, to obtain etched multi-layered graphene. The flow rate of argon and hydrogen is 100-500 sccm and 10-50 sccm, respectively. USE - Etching of multi-layered graphene. ADVANTAGE - The method efficiently and economically provides smooth-edged multi-layered graphene.