▎ 摘　　要

NOVELTY - The photodetector (500) has a substrate (505) provided with a first channel of waveguide material (510) embedded in substrate. A first insulating layer is arranged on and across the upper surface. A graphene layer (520) is arranged on the first insulating layer and over the first channel of waveguide material. The two ohmic contacts (530a,530b) are provided in contact with the graphene layer and arranged on either side of first channel of waveguide material. The first insulator layer comprises silicon nitride (515a) and/or an oxide of aluminum, hafnium, or magnesium. The graphene is optionally doped monolayer graphene sheet. The first insulative layer and second insulative layer (515c) comprise an oxide of aluminum, hafnium and magnesium, preferably aluminum oxide or hafnium oxide on the silicon nitride layer. USE - Photodetector for photonic circuit of array for use in electro-optic modulator (EOM) of system (all claimed) for optical transmission of data. ADVANTAGE - The photodetector can deliver the potential of graphene to provide commercial photonic devices. It can be manufactured with sufficient consistency and reliability for commercial device production. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: a method for forming photodetector; a photonic circuit; an array; a system for optical transmission of data; and a method for forming system for optical transmission of data. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a photodetector. 500Photodetector 505Substrate 510Waveguide material 515aSilicon nitride 515cSecond insulative layer 520Graphene layer 530a,530bOhmic contact