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  • 专利标题:   Preparation of graphene-type conductive material involves applying oxide graphene sol and metal salt solution and/or metal colloidal solution on substrate layer, separating, forming solid film and treating at specified condition.
  • 专利号:   WO2011144010-A1, CN102254582-A, US2013059143-A1, JP2013533189-W, CN102254582-B, JP5540151-B2
  • 发明人:   LIANG M, ZHI L
  • 专利权人:   NAT CENT NANOSCIENCE TECHNOLOGY CHINA, NAT CENT NANOSCIENCE TECHNOLOGY CHINA, NAT CENT NANOSCIENCE TECHNOLOGY CHINA, NAT CENT NANOSCIENCE TECHNOLOGY CHINA
  • 国际专利分类:   C01B031/02, H01B001/04, B05D005/12, B32B009/00, B82Y030/00, B82Y040/00, C01B031/00, H01B001/24, H01B013/00, H01M004/13
  • 专利详细信息:   WO2011144010-A1 24 Nov 2011 C01B-031/02 201180 Pages: 26 Chinese
  • 申请详细信息:   WO2011144010-A1 WOCN074117 16 May 2011
  • 优先权号:   CN10179290

▎ 摘　　要

NOVELTY - An oxide graphene sol and metal salt solution and/or metal colloidal solution is applied on a substrate layer, and separated to form solid film. The obtained solid film is treated at 30 seconds to 10000 hours in hydrogen atmosphere or reducing atmosphere containing hydrogen at -50 degrees C to 200 degrees C and pressure of 0.01-100 MPa, to obtain graphene-type conductive material. USE - Preparation of graphene-type conductive material. The preparation occurs at a low temperature using cheap hydrogen, so it's simple and environmental friendly DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for graphene-type conductive material.