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  • 专利标题:   Anisotropic etching of graphene used as electronic material, involves generating hydrogen plasma using microwave plasma, and anisotropically etching graphene using generated hydrogen plasma.
  • 专利号:   US2018226261-A1, KR2018091729-A, JP2018127369-A
  • 发明人:   IFUKU R, MATSUMOTO T
  • 专利权人:   TOKYO ELECTRON LTD, TOKYO ELECTRON LTD, TOKYO ELECTRON LTD
  • 国际专利分类:   H01J037/32, H01L021/30, H01L021/3065, H01L021/67, H01L029/16, H01L021/02, C01B032/15, C01B032/18, C01B032/182
  • 专利详细信息:   US2018226261-A1 09 Aug 2018 H01L-021/3065 201857 Pages: 14 English
  • 申请详细信息:   US2018226261-A1 US888468 05 Feb 2018
  • 优先权号:   JP019827

▎ 摘　　要

NOVELTY - Anisotropic etching of graphene involves generating hydrogen plasma using microwave plasma, and anisotropically etching graphene using generated hydrogen plasma. USE - Anisotropic etching of graphene used as electronic material for transistor channel, sensing elements and wiring. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of graphene during anisotropic etching. Substrate (1) Graphene layer (2) Work piece (3) Hexagonal concave portion (4)