▎ 摘　　要

NOVELTY - Defects (306) in a dielectric layer (308) are removed by adjoining an atomically two-dimensional material (106) and the dielectric layer having the defects, where the dielectric layer is adapted to convey a variable electric field for modulating a wavelength of photons electronically emitted across a band structure of the atomically two-dimensional material; and strobing laser pulses (302) into the dielectric layer with sufficient cumulative energy to remove a majority of the defects in the dielectric layer without altering the atomically two-dimensional material. USE - Removal of defects in a dielectric layer for fabricating a device emitting light from hot electrons (claimed). ADVANTAGE - During operation of the device with energy band diagram, a voltage bias between the semiconductor substrate and the atomically two-dimensional material gives electrons in the conduction band sufficient electronic energy so that hot electrons out of electrons quantum mechanically tunnel from the conductive layer of semiconductor substrate through the thin barrier of insulating layer into the atomically two-dimensional material. Laser pulses are strobed into the dielectric layer with sufficient cumulative energy to remove a majority of the defects in the dielectric layer without altering the atomically two-dimensional material. The insulating layer providing a thin barrier that allows hot electrons to quantum mechanically tunnel through the thin barrier from the conductive layer to an atomically two-dimensional material. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for fabricating a device emitting light from hot electrons, which involves providing a conductive layer that is a supply of electrons; adjoining the conductive layer and an insulating layer, which presents a thin barrier allowing only the hot electrons out of the electrons to tunnel from the conductive layer through the thin barrier; adjoining the insulating layer and an atomically two-dimensional material (106) having a band structure; adjoining the atomically two-dimensional material and a dielectric layer (308) having defects (306), where the dielectric layer is adapted to convey a variable electric field for modulating a wavelength of photons electronically emitted across the band structure of the atomically two-dimensional material; strobing laser pulses (302) into the dielectric layer with sufficient cumulative energy to remove a majority of the defects in the dielectric layer without altering the atomically two-dimensional material; and adjoining the dielectric layer and an electrode layer, which is adapted to apply the variable electric field via the dielectric layer to modulate the wavelength of the photons emitted when the hot electrons transition across the band structure of the atomically two-dimensional material. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the strobing of laser pulses through an atmosphere to remove defects in a dielectric layer during fabrication of the device. Atomically two-dimensional material (106) Device (300) Laser pulses (302) Defects (306) Dielectric layer (308)