• 专利标题:   Graphene-assisted vanadium oxide thermal light modulator comprises first insulating layer formed on surface of substrate, graphene layer arranged on first insulating layer and second insulating layer formed above graphene layer.
  • 专利号:   CN113064289-A
  • 发明人:   HUANG B, CHENG C, CHEN H
  • 专利权人:   SUZHOU MICRO PHOTOELECTRON FUSION TECHNO
  • 国际专利分类:   C23C014/00, C23C014/08, C23C014/18, C23C014/35, C23C014/58, G02F001/01
  • 专利详细信息:   CN113064289-A 02 Jul 2021 G02F-001/01 202163 Pages: 8 Chinese
  • 申请详细信息:   CN113064289-A CN10286262 17 Mar 2021
  • 优先权号:   CN10286262

▎ 摘  要

NOVELTY - Graphene-assisted vanadium oxide thermal light modulator comprises a first insulating layer formed on the surface of a substrate. A graphene layer arranged on the first insulating layer. A second insulating layer formed above the graphene layer, where the graphene auxiliary vanadium oxide thermal light modulator further comprises a metal electrode through photo-etching or deposited on the graphene layer and a vanadium oxide thin film layer set on the second insulating layer by means of magnetron sputtering, reactive ion sputtering or depositing metal reoxidation. USE - Used as graphene-assisted vanadium oxide thermal light modulator. ADVANTAGE - The modulator has good characteristics of graphene and vanadium oxide, small size, low insertion loss, high extinction ratio, and wide working wavelength range. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing graphene auxiliary vanadium oxide thermal light modulator. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of the graphene-assisted vanadium oxide thermal light modulator.