• 专利标题:   Through-hole type graphene/polymethyl methacrylate heterostructure pressure sensor used for atmospheric pressure sensing, comprises silicon/silicon dioxide substrate layer, heterostructure pressure sensing layer, electrode, and housing.
  • 专利号:   CN111551293-A
  • 发明人:   ZHANG Y, LIU Y, LIU G, LIN X, QIU J, LV K, YANG P, CHENG X, WANG G
  • 专利权人:   UNIV NAT DEFENSE TECHNOLOGY
  • 国际专利分类:   G01L001/18, G01L001/22
  • 专利详细信息:   CN111551293-A 18 Aug 2020 G01L-001/18 202072 Pages: 9 Chinese
  • 申请详细信息:   CN111551293-A CN10403778 13 May 2020
  • 优先权号:   CN10403778

▎ 摘  要

NOVELTY - Through-hole type graphene/polymethyl methacrylate (PMMA) heterostructure pressure sensor comprises a silicon/silicon dioxide substrate layer, a graphene/PMMA heterostructure pressure sensing layer, an electrode, and a housing. The silicon/silicon dioxide substrate layer is etched with through holes or through hole arrays, and comprises electrodes. The electrodes are on both sides of the through hole or the through hole array. The graphene/PMMA heterostructure pressure sensing layer comprises graphene and PMMA, and has a two-layer structure, in which the upper layer is PMMA, and the lower layer is graphene. The graphene/PMMA heterostructure pressure sensing layer is attached above the through hole on the upper surface of the silicon/silicon dioxide substrate layer. The graphene in the graphene/PMMA heterostructure pressure sensing layer directly contacts the electrode on the silicon/silicon dioxide substrate layer to form an electrical contact. USE - Through-hole type graphene/polymethyl methacrylate heterostructure pressure sensor used for atmospheric pressure sensing. ADVANTAGE - The graphene/PMMA heterostructure pressure sensor is economical, and has high yield, high sensitivity, and excellent stability. The preparation method is simple and controllable. DETAILED DESCRIPTION - Through-hole type graphene/polymethyl methacrylate (PMMA) heterostructure pressure sensor comprises a silicon/silicon dioxide substrate layer, a graphene/PMMA heterostructure pressure sensing layer, an electrode, and a housing. The silicon/silicon dioxide substrate layer is etched with through holes or through hole arrays, and comprises electrodes. The electrodes are on both sides of the through hole or the through hole array. The graphene/PMMA heterostructure pressure sensing layer comprises graphene and PMMA, and has a two-layer structure, in which the upper layer is PMMA, and the lower layer is graphene. The graphene/PMMA heterostructure pressure sensing layer is attached above the through hole on the upper surface of the silicon/silicon dioxide substrate layer. The graphene in the graphene/PMMA heterostructure pressure sensing layer directly contacts the electrode on the silicon/silicon dioxide substrate layer to form an electrical contact. The housing comprises a sealing ring, a tube socket, a pin, and a cap. The silicon/silicon dioxide substrate layer is connected to the upper surface of the tube seat through the sealing ring to form a vacuum chamber. The cap covers the pressure sensing layer of the graphene/PMMA heterostructure. The pin penetrates the upper and lower surfaces of the tube socket, the upper end of the pin is connected to the electrode of the silicon/silicon dioxide substrate layer through a lead, and the lower end is connected to an external test circuit. The shell covers the silicon/silicon dioxide substrate layer and the graphene/PMMA heterostructure pressure sensing layer. An INDEPENDENT CLAIM is included for preparation of through-hole type graphene/polymethyl methacrylate heterostructure pressure sensor.