• 专利标题:   Reduction of graphene oxide used in electronic device, involves annealing graphene oxide deposited on substrate in presence of graphitic material under vacuum to form reduced graphene oxide.
  • 专利号:   IN201403472-I3, IN314507-B
  • 发明人:   SINGH G
  • 专利权人:   INDIAN INST TECHNOLOGY BOMBAY
  • 国际专利分类:   C01B031/00, C08K003/22
  • 专利详细信息:   IN201403472-I3 06 May 2016 C01B-031/00 201667 Pages: 51 English
  • 申请详细信息:   IN201403472-I3 INMU03472 03 Nov 2014
  • 优先权号:   INMU03472

▎ 摘  要

NOVELTY - Reduction of graphene oxide involves annealing graphene oxide deposited on a substrate in presence of a graphitic material under vacuum to form reduced graphene oxide. USE - Reduction of graphene oxide used in electronic device (claimed). Uses include but are not limited to field effect transistor, transparent conducting electrode, sensor and memory device. ADVANTAGE - The method enables easy, economical and environmentally-friendly graphene oxide reduction without using harmful chemicals and equipment, and provides reduced graphene oxide having high electroconductivity and field effect mobility, and low electrical resistance.