▎ 摘　　要

NOVELTY - The method involves removing first material from a portion of a surface of a substrate (110) to expose underlying second material. A solution is applied to the exposed second material. The substrate is heated to evaporate a solvent in the solution. The solution comprising first and second diazonium molecules and first and second graphene flakes is reapplied. The substrate is reheated to cause evaporation of the solvent in the reapplied solution, where the second diazonium molecule with the attached second graphene flake bonds to the first graphene flake attached to the first diazonium molecule. USE - Method for forming graphene heat dissipating structures e.g. heat spreaders and heat sinks, on a substrate of an electronic component. Uses include but are not limited to a power device, die-level packaged integrated circuit, semiconductor-containing device, amplifier chip set for radio frequency (RF) applications, complementary metal-oxide-semiconductor (CMOS) i.e. radiation hardened CMOS, silicon-based device i.e. silicon-germanium device, macro-scale lithium battery, transformer and a capacitor bank in an industrial environment. ADVANTAGE - The method enables facilitating the graphene heat dissipating structure to be atomically close to a surface of the substrate to enable minimization of an air gap at a substrate surface with high thermal conductivity of graphene material, while reducing component size and preventing the generated heat from deleteriously affecting operation of the component. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of stages for forming a graphene-containing layer. Graphene heat dissipating structures (100) Substrate (110) Underlying layer (115) Oxide regions (120)