• 专利标题:   Cadmium telluride thin film solar energy battery has boron-doped graphene passivation layer which is arranged between buffer layer and cadmium telluride absorbing layer that is arranged in metal back electrode layer.
  • 专利号:   CN205039160-U
  • 发明人:   ZHAO C, WU J, ZHAO Y
  • 专利权人:   UNIV XIAN JIAOTONG
  • 国际专利分类:   H01L031/0216, H01L031/0296
  • 专利详细信息:   CN205039160-U 17 Feb 2016 H01L-031/0296 201619 Chinese
  • 申请详细信息:   CN205039160-U CN20732043 21 Sep 2015
  • 优先权号:   CN20732043

▎ 摘  要

NOVELTY - less than b greater than this utility model claims a cadmium telluride thin film solar energy battery, comprising the following from then on in turn set with the metal back electrode layer, buffer layer, cadmium telluride absorb layer, vulcanization window layer cadmium, zinc oxide high flame-retardant layer, and transparent electric conduction electrode layer, wherein set with boron doped graphene passivation layer in between the buffer layer and the cadmium telluride absorb layer, this utility model new advantages and wherein, the boron doped graphene passivation layer comprises cadmium telluride and absorb layer nearest the power function, and transmitting the collecting hole to absorb cadmium telluride layer of product and, at the same time also retain of graphene and good electrical performance, can well restrain of the adjacent metal material by oxidation, too can be as a passivation layer to prevent the different between thin layer atom or ion and diffusion, effectively prevent of buffer layer and the copper diffusion layer, at the same time reduce effective degeneration rate of solar energy battery. less than /b greater than