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  • 专利标题:   Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.
  • 专利号:   US2011030991-A1, WO2011016837-A1, TW201111278-A, EP2462264-A1, KR2012080168-A, MX2012001605-A1, CN102597336-A, JP2013501696-W, EP2584073-A2, EP2584074-A2, EP2584075-A2, EP2584073-A3, EP2584074-A3, EP2584075-A3, US8507797-B2, RU2012108604-A, JP5667188-B2, MX326801-B, IN201200996-P1, RU2567949-C2, KR1698228-B1, CN102597336-B, EP2462264-B1, EP2584074-B1, EP2584075-B1
  • 发明人:   VEERASAMY V S, VEERASAMY V
  • 专利权人:   GUARDIAN IND CORP, GUARDIAN IND CORP, GUARDIAN IND CORP, GUARDIAN IND CORP, GUARDIAN IND, GUARDIAN GLASS LLC
  • 国际专利分类:   C30B031/22, H01B001/04, C30B029/02, C30B031/02, C30B031/04, C01B031/02, C01B031/04, C23C014/48, H01L031/04, B82B003/00, B82Y030/00, B82Y040/00, C01B032/188
  • 专利详细信息:   US2011030991-A1 10 Feb 2011 H01B-001/04 201114 Pages: 21 English
  • 申请详细信息:   US2011030991-A1 US461343 07 Aug 2009
  • 优先权号:   US461343, KR705794

▎ 摘　　要

NOVELTY - Manufacturing a doped graphene thin film comprises hetero-epitaxially growing an intermediate graphene thin film on a catalyst thin film having a single-orientation large-grain crystal structure; and doping the intermediate graphene thin film with n-type or p-type dopants in making the doped graphene thin film. The doped graphene thin film has a sheet resistance less than 150 ohms/square. USE - Method for manufacturing a doped graphene thin film for electrochromic devices. ADVANTAGE - The method can manufacture a doped graphene thin film having good stability, high transparency, and excellent conductivity. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a layer stack useful in the graphene release or debonding techniques. Catalyst layer (503) Back support (505) Graphene (509) Release layer (701) Polymer layer (703)