▎ 摘　　要

NOVELTY - The manufacturing method involves forming a seed material on a sidewall of mandrel (20a,20b) and a graphene FET on the seed material, and removing the seed material. The graphene FET is comprised of forming a graphene layer on the seed material, and source electrode and drain electrode on the graphene layer. An insulator material (90) is formed over the graphene FET. USE - Manufacturing method for semiconductor structure (claimed), e.g. graphene FET. ADVANTAGE - Allows the two FETs on either side of the mandrel to be electrically isolated from one another by forming the vent hole through the entire length and depth of the graphene along the top of the mandrel. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a semiconductor structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of the manufacturing method for semiconductor structure. Insulator layer (15) Mandrel (20a,20b) Graphene (30) Insulator material (90)