▎ 摘　　要

NOVELTY - Preparation of graphene-semiconductor quantum dot composite material comprises: (a) stirring and mixing graphite powder and sodium nitrate under acidic conditions, oxidizing, adding sodium nitrate and deionized water, washing, filtering, deoxidizing to obtain graphene solution; (b) injecting sodium hydroselenide solution, sodium hydrogen telluride solution or hydrogen sulfide gas to a mixed solution of perchlorate, chloride or nitrate and aminoacids, heat processing to obtain a quantum dot solution; and (c) mixing the graphene solution with the quantum dot solution to obtain the product. USE - The method is useful for the preparation of graphene-semiconductor quantum dot composite material. ADVANTAGE - The graphene and the quantum dot can be dissolved with each other in water and the process of ligand exchanging or modification is not needed and hence the method is simple and economical. DETAILED DESCRIPTION - Preparation of graphene-semiconductor quantum dot composite material comprises: (a) stirring and mixing graphite powder and sodium nitrate under acidic conditions, carrying out strong oxidation reaction, sequentially adding sodium nitrate and deionized water, washing, filtering, deoxidizing using hydrazine hydrate to obtain graphene solution; (b) quickly injecting sodium hydroselenide solution, sodium hydrogen telluride solution or hydrogen sulfide gas to a mixed solution of perchlorate, chloride or nitrate and mercaptan acid and provided with heavy metals, heat processing to obtain a quantum dot solution; and (c) mixing the graphene solution with the quantum dot solution to obtain the graphene-quantum dot composite material.