▎ 摘　　要

NOVELTY - The modulator has a nano-structure layer (100) formed at a side of a two-dimensional material layer (200). The nano-structure layer and the two-dimensional material layer are stacked together to form a heterojunction structure. The nano-structure layer is formed with a periodically-arranged nano-structure. The two-dimensional material layer is formed by a layer of two-dimensional material with non-linear conductivity. The nano structure is formed with a centrosymmetric figure or an axisymmetric figure-shaped structure. The nano-structure is formed as rectangular, circular, annular or cross-shaped structure. The nano-structure is formed by full-medium material or noble metal material. The two-dimensional material layer is formed by graphene, black phosphorus and transition metal chalcogenide compoundmaterial. The two-dimensional material layer is formed with a single-layer graphene layer. USE - Semiconductor-based terahertz wave modulator for use in an optical technical field. Can also be used in an optoelectronics field, a semiconductor field and a material science field. ADVANTAGE - The modulator enhances high-order non-linear effect of incident terahertz wave for multiple times and modulation depth of terahertz wave so as to realize non-linear modulation process of the terahertz wave. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a terahertz wave modulation method. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a terahertz wave modulator. Nano-structure layer (100) Two-dimensional material layer (200)