• 专利标题:   Silicon-based multi-junction solar cell graded buffer layer used e.g. ground photovoltaic power station includes graded buffer layer formed by alternately growing graphene layer and III-V group compound layer of different components, where bottom- and top-most layers are both III-V compound layer.
  • 专利号:   CN114171615-A
  • 发明人:   JI H, LUO S, WANG Y, XU P
  • 专利权人:   JIANGSU HUAXING OPTO TECHNOLOGY CO LTD
  • 国际专利分类:   H01L031/0336, H01L031/0352, H01L031/0687
  • 专利详细信息:   CN114171615-A 11 Mar 2022 H01L-031/0352 202229 Chinese
  • 申请详细信息:   CN114171615-A CN11325702 10 Nov 2021
  • 优先权号:   CN11325702

▎ 摘  要

NOVELTY - Silicon-based multi-junction solar cell graded buffer layer comprises a graded buffer layer (30) formed by alternately growing a graphene layer (31) and a III-V group compound layer (32) of different components. The bottommost layer and the topmost layer of the graded buffer layer are both the III-V compound layer. USE - Silicon-based multi-junction solar cell for space power supply system of space satellite. Can also be used for ground photovoltaic power station. ADVANTAGE - The silicon-based multi-junction solar cell can eliminate the gallium arsenide and aluminum gallium arsenide on the crystal silicon substrate by using the graded buffer layer of the multi-layer composite structure combined by the III-V compound material and the graphene, aluminum gallium indium phosphide and other material layer is subjected to mismatch stress, reducing material layer defect density, and improving the photoelectric conversion efficiency of the battery. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a silicon-based multi-junction solar cell, comprising a graded buffer layer as per se. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic structural view of the silicon-based multi-junction solar cell. Silicon substrate (10) Silicon sub-battery (20) Gradually changing buffer layer (30) Graphene layer (31) III-V compound layer (32) First tunnel junction (40) Sub-cell (50) Second tunnel junction (60) Aluminum gallium indium phosphide sub-cell (70)