• 专利标题:   Pulse light detector, has piezoelectric film located at center portion of supporting layer, and electrode located on sides of piezoelectric film above supporting layer, where photoacoustic film located at portion above piezoelectric film.
  • 专利号:   CN113155295-A, CN214173578-U
  • 发明人:   HAN C, ZHANG Q, WANG X, DAI M, ZHAO Q
  • 专利权人:   UNIV QINGDAO SCI TECHNOLOGY
  • 国际专利分类:   G01J011/00
  • 专利详细信息:   CN113155295-A 23 Jul 2021 G01J-011/00 202170 Pages: 6 Chinese
  • 申请详细信息:   CN113155295-A CN10214913 24 Feb 2021
  • 优先权号:   CN10214913, CN20405069

▎ 摘  要

NOVELTY - The detector has a substrate located at a lower portion of a detector main body. A supporting layer is located above the substrate. A piezoelectric film is located at a center portion of an upper portion of the supporting layer. An electrode is located on two sides of the piezoelectric film above the supporting layer. A photoacoustic film is located at a center portion of the piezoelectric film, where thickness of the supporting layer is about 200-1000nm, thickness of the piezoelectric film is about 500-5000nm and thickness of the photoacoustic film is about 100-2000nm. USE - Pulse light detector. ADVANTAGE - The detector has better photo-acoustic effect and piezoelectric effect, and can quickly and accurately measure broadband spectrum of pulse light. The detector is simple in structure, and has high detection sensitivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a pulse light detector manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a pulse light detector.